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VCSEL

Vertical-cavity surface-emitting lasers, characterized and qualified in-house. This is the one area where we publish performance results and where product is available today.

Readout

Wavelength

A vertical-cavity surface-emitting laser is the pump source at the centre of a vapor cell sensor. For a rubidium-referenced sensor the number that matters is the rubidium D1 line at 794.98 nm, and our 25 µm mesa, 3 µm aperture devices are built to sit close to it — an etalon check across characterized samples reads 791.5 nm, and thermal tuning moves a single device from 791.035 nm at 24.07°C to 791.315 nm at 30°C. Devices are qualified across a 25°C to 80°C envelope at 0.8, 1.5 and 2.2 mA drive.

VCSEL wavelength versus temperatureA temperature axis from 20 to 85 degrees Celsius and a wavelength axis from 790 to 796 nanometres. A measured trace runs from 791.035 nanometres at 24.07 degrees Celsius to 791.315 nanometres at 30 degrees Celsius. A dashed line marks the rubidium D1 target at 794.98 nanometres. A shaded band marks the 25 to 80 degree Celsius qualification envelope the device is tested across.25°C80°C20406080Temperature (°C)791792793794795Wavelength (nm)Rb D1 target · 794.98 nm791.035 nm @ 24.07°C791.315 nm @ 30°C
Wavelength versus temperature, WaveEye WLM scan of a characterized 25 µm mesa, 3 µm aperture device. An etalon check across characterized samples reads 791.5 nm at 25–80°C, 0.8 / 1.5 / 2.2 mA drive. Target is the rubidium D1 line, 794.98 nm.

A separate, higher-power line of multijunction VCSELs runs at 905 nm and 940 nm for automotive sensing — the same process, a different application and a different target wavelength than the rubidium-referenced devices above.

Characterization

Measured, not assumed

Every die is probed and scanned on an automated setup rather than sampled by hand. That is what makes a wavelength figure a specification instead of a typical value, and it is the same apparatus that supports precise photonic characterization for the rest of the sensor.

The photograph is the measurement in progress: two probes down on a single die, the emitted beam visible on the wafer surface.

Probe needles contacting a VCSEL die under a microscope, with the emitted beam visible on the wafer
Under test A VCSEL die on probe, emitting during characterization.